ITO deposited by pyrosol for photovoltaic applications
Identifieur interne : 000247 ( Russie/Analysis ); précédent : 000246; suivant : 000248ITO deposited by pyrosol for photovoltaic applications
Auteurs : RBID : Pascal:07-0501167Descripteurs français
- Pascal (Inist)
- Dispositif photovoltaïque, Morphologie, Propriété électrique, Propriété optique, Dépendance température, Cellule solaire, Microscopie force atomique, Microscopie électronique balayage, Microscopie électronique transmission, Ellipsométrie, Conductivité électrique, Indice réfraction, Couche mince, Rugosité, Etain oxyde, Indium oxyde, Silicium, Méthanol, Hétérojonction, Substrat verre, Substrat Si, Si, 8460J, 7350, 7866, 6855J.
- Wicri :
- concept : Méthanol.
English descriptors
- KwdEn :
- Atomic force microscopy, Electrical conductivity, Electrical properties, Ellipsometry, Heterojunction, Indium oxide, Methanol, Morphology, Optical properties, Photovoltaic cell, Refraction index, Roughness, Scanning electron microscopy, Silicon, Solar cell, Temperature dependence, Thin film, Tin oxide, Transmission electron microscopy.
Abstract
The goal of this work is to investigate morphology, electrical and optical properties of indium-tin-oxide (ITO) deposited by pyrosol on glass and Si substrates at different temperatures and to implement such layers for the processing of Si-based solar cells. The influence of the methanol/ H2O ratio on general properties of ITO was investigated. Atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission spectra, ellipsometry and resistivity measurements were used for the analysis. It is shown that properties of ITO layers depend dramatically on the substrate used. It is shown that the resistivity of ITO layers deposited on a glass substrate is higher up to 2.5 times, compared to that of ITO layers deposited on a Si substrate at the same conditions, but in both cases decreases if the deposition temperature increases. Moreover, ITO layers deposited on a glass substrate are more flat and their refractive indexes are always lower for all deposition temperatures. An increase of the H2O concentration in a film-forming solution leads to a decrease of the ITO film resistivity and to a slight increase of the roughness. An application of pyrosol deposited ITO films as the top transparent electrodes for the (p+nn+)Si and heterojunction ITO/n-Si solar cells is demonstrated.
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Pascal:07-0501167Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">ITO deposited by pyrosol for photovoltaic applications</title><author><name sortKey="Chebotareva, A B" uniqKey="Chebotareva A">A. B. Chebotareva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lomonosov Moscow State University, NPI, Microelectronics Department, Leninskie Gory 1/2</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Untila, G G" uniqKey="Untila G">G. G. Untila</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lomonosov Moscow State University, NPI, Microelectronics Department, Leninskie Gory 1/2</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Kost, T N" uniqKey="Kost T">T. N. Kost</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lomonosov Moscow State University, NPI, Microelectronics Department, Leninskie Gory 1/2</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Jorgensen, S" uniqKey="Jorgensen S">S. Jorgensen</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Oslo, Department of Chemistry, PO Box 1033, Blindern</s1><s2>Oslo</s2><s3>NOR</s3><sZ>4 aut.</sZ></inist:fA14><country>Norvège</country><wicri:noRegion>Oslo</wicri:noRegion></affiliation></author><author><name sortKey="Ulyashin, A G" uniqKey="Ulyashin A">A. G. Ulyashin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Section for Renewable Energy, Institute for Energy Technology, PO Box 40</s1><s2>2027 Kjeller</s2><s3>NOR</s3><sZ>5 aut.</sZ></inist:fA14><country>Norvège</country><wicri:noRegion>2027 Kjeller</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0501167</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0501167 INIST</idno><idno type="RBID">Pascal:07-0501167</idno><idno type="wicri:Area/Main/Corpus">007202</idno><idno type="wicri:Area/Main/Repository">007824</idno><idno type="wicri:Area/Russie/Extraction">000247</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Ellipsometry</term><term>Heterojunction</term><term>Indium oxide</term><term>Methanol</term><term>Morphology</term><term>Optical properties</term><term>Photovoltaic cell</term><term>Refraction index</term><term>Roughness</term><term>Scanning electron microscopy</term><term>Silicon</term><term>Solar cell</term><term>Temperature dependence</term><term>Thin film</term><term>Tin oxide</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dispositif photovoltaïque</term><term>Morphologie</term><term>Propriété électrique</term><term>Propriété optique</term><term>Dépendance température</term><term>Cellule solaire</term><term>Microscopie force atomique</term><term>Microscopie électronique balayage</term><term>Microscopie électronique transmission</term><term>Ellipsométrie</term><term>Conductivité électrique</term><term>Indice réfraction</term><term>Couche mince</term><term>Rugosité</term><term>Etain oxyde</term><term>Indium oxyde</term><term>Silicium</term><term>Méthanol</term><term>Hétérojonction</term><term>Substrat verre</term><term>Substrat Si</term><term>Si</term><term>8460J</term><term>7350</term><term>7866</term><term>6855J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Méthanol</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The goal of this work is to investigate morphology, electrical and optical properties of indium-tin-oxide (ITO) deposited by pyrosol on glass and Si substrates at different temperatures and to implement such layers for the processing of Si-based solar cells. The influence of the methanol/ H<sub>2</sub>O ratio on general properties of ITO was investigated. Atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission spectra, ellipsometry and resistivity measurements were used for the analysis. It is shown that properties of ITO layers depend dramatically on the substrate used. It is shown that the resistivity of ITO layers deposited on a glass substrate is higher up to 2.5 times, compared to that of ITO layers deposited on a Si substrate at the same conditions, but in both cases decreases if the deposition temperature increases. Moreover, ITO layers deposited on a glass substrate are more flat and their refractive indexes are always lower for all deposition temperatures. An increase of the H<sub>2</sub>O concentration in a film-forming solution leads to a decrease of the ITO film resistivity and to a slight increase of the roughness. An application of pyrosol deposited ITO films as the top transparent electrodes for the (p<sup>+</sup>nn<sup>+</sup>)Si and heterojunction ITO/n-Si solar cells is demonstrated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>515</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>ITO deposited by pyrosol for photovoltaic applications</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>First International Symposium on Transparent Conducting Oxides: 1st IS TCO 2006</s1></fA09><fA11 i1="01" i2="1"><s1>CHEBOTAREVA (A. B.)</s1></fA11><fA11 i1="02" i2="1"><s1>UNTILA (G. G.)</s1></fA11><fA11 i1="03" i2="1"><s1>KOST (T. N.)</s1></fA11><fA11 i1="04" i2="1"><s1>JORGENSEN (S.)</s1></fA11><fA11 i1="05" i2="1"><s1>ULYASHIN (A. G.)</s1></fA11><fA12 i1="01" i2="1"><s1>KIRIAKIDIS (George)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BARATON (Marie-Isabelle)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>MAO (Samuel)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Lomonosov Moscow State University, NPI, Microelectronics Department, Leninskie Gory 1/2</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>University of Oslo, Department of Chemistry, PO Box 1033, Blindern</s1><s2>Oslo</s2><s3>NOR</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Section for Renewable Energy, Institute for Energy Technology, PO Box 40</s1><s2>2027 Kjeller</s2><s3>NOR</s3><sZ>5 aut.</sZ></fA14><fA15 i1="01"><s1>Physics Dpt. Univ. of Crete, IESL/FORTH, Voutes, PO Box 1385</s1><s2>Heraklion 71110 Crete</s2><s3>GRC</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Limoges</s1><s3>FRA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>University of Berkeley-California</s1><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA20><s1>8505-8510</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000143469600150</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0501167</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>The goal of this work is to investigate morphology, electrical and optical properties of indium-tin-oxide (ITO) deposited by pyrosol on glass and Si substrates at different temperatures and to implement such layers for the processing of Si-based solar cells. The influence of the methanol/ H<sub>2</sub>O ratio on general properties of ITO was investigated. Atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission spectra, ellipsometry and resistivity measurements were used for the analysis. It is shown that properties of ITO layers depend dramatically on the substrate used. It is shown that the resistivity of ITO layers deposited on a glass substrate is higher up to 2.5 times, compared to that of ITO layers deposited on a Si substrate at the same conditions, but in both cases decreases if the deposition temperature increases. Moreover, ITO layers deposited on a glass substrate are more flat and their refractive indexes are always lower for all deposition temperatures. An increase of the H<sub>2</sub>O concentration in a film-forming solution leads to a decrease of the ITO film resistivity and to a slight increase of the roughness. An application of pyrosol deposited ITO films as the top transparent electrodes for the (p<sup>+</sup>nn<sup>+</sup>)Si and heterojunction ITO/n-Si solar cells is demonstrated.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Photovoltaic cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Morphologie</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Morphology</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Morfología</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Propriété électrique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Electrical 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i1="12" i2="X" l="ENG"><s0>Refraction index</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Indice refracción</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Couche mince</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Thin film</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Capa fina</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Rugosité</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Roughness</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Rugosidad</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Etain oxyde</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Tin oxide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Indium oxyde</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Silicio</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Méthanol</s0><s2>NK</s2><s2>FX</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Methanol</s0><s2>NK</s2><s2>FX</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Metanol</s0><s2>NK</s2><s2>FX</s2><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>29</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Heterojunction</s0><s5>29</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Heterounión</s0><s5>29</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Substrat verre</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Substrat Si</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Si</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>7350</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>7866</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>330</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>IS-TCO 2006 : International Symposium on Transparent Conducting Oxides</s1><s2>1</s2><s3>Island of Crete GRC</s3><s4>2006-10-23</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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